FQP3N60C mosfet equivalent, n-channel mosfet.
* 3.0 A, 600 V, RDS(on) = 3.4 W (Max.) at VGS = 10 V, ID = 1.5 A
* Low Gate Charge (Typ. 10.5 nC)
* Low Crss (Typ. 5.0 pF)
* 100% Avalanche Tested
* T.
This N−Channel enhancement mode power MOSFET is produced
using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switc.
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